EIC8596-8 updated 08/21/2007 8.5 0-9.60ghz 8-watt internally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 features ? 8.50 ?9.60ghz bandwidth ? input/output impedance matched to 50 ohms ? +39.5 dbm output power at 1db compression ? 7.5 db power gain at 1db compression ? 30% power added efficiency ? -43 dbc im3 at po = 28.5 dbm scl ? 100% tested for dc, rf, and r th electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 8.50-9.60ghz v ds = 10 v, i dsq 2200ma 38.5 39.5 dbm g 1db gain at 1db compression f = 8.50-9.60ghz v ds = 10 v, i dsq 2200ma 6.5 7.5 db ? g gain flatness f = 8.50-9.60ghz v ds = 10 v, i dsq 2200ma 0.6 db pae power added efficiency at 1db compression v ds = 10 v, i dsq 2200ma f = 8.50-9.60ghz 30 % id 1db drain current at 1db compression f = 8.50-9.60ghz 2200 2600 ma im3 output 3rd order intermodulation distortion ? f = 10 mhz 2-tone test; pout = 28.5 dbm s.c.l 2 v ds = 10 v, i dsq 65% idss f = 9.60ghz -40 -43 dbc i dss saturated drain current v ds = 3 v, v gs = 0 v 3700 4300 ma v p pinch-off voltage v ds = 3 v, i ds = 40 ma -2.5 -4.0 v r th thermal resistance 3 2.5 3.5 o c/w note: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth depends on case mounting. absolute maximum rating for efe symbols parameters absolute 1 continuous 2 vds drain-source voltage 15v 10v vgs gate-source voltage -5v -4v igf forward gate current 96ma 28.8ma igr reverse gate current -19.2ma -4.8ma pin input power 39.0dbm @ 3db compression tch channel temperature 175c 175c tstg storage temperature -65c to +175c -65c to +175c pt total power dissipation 43w 43w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals.
EIC8596-8 updated 08/21/2007 8.5 0-9.60ghz 8-watt internally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 performance data typical s-parameters (t= 25c, 50 ? system, de-embedded to edge of package) v ds = 10 v, i dsq 2200ma freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 8.00 0.390 177.400 3.255 -57.38 0 0.105 -114.220 0.514 78.300 8.25 0.306 125.970 3.195 -88.570 0.112 -145.020 0.527 51.750 8.50 0.309 77.020 3.052 -116.8 50 0.113 -173.180 0.507 31.300 8.75 0.348 40.380 2.957 -144.300 0.117 161.600 0.459 12.160 9.00 0.378 8.330 2.917 -170.5 90 0.122 135.400 0.393 -8.460 9.25 0.371 -22.220 2.884 161.430 0.128 108.950 0.328 -38.080 9.50 0.334 -59.000 2.897 132.32 0 0.131 81.650 0.287 -82.820 9.75 0.280 -109.930 2.793 100.510 0.132 49.430 0.327 -140.430 10.00 0.299 -175.540 2.528 66. 690 0.122 16.320 0.462 172.730 10.25 0.387 132.770 2.112 34.290 0.103 -16.260 0.614 140.720 10.50 0.490 98.340 1.672 5.950 0. 081 -45.080 0.713 117.810 0 1.0 -1.0 1.0 10.0 - 1 0 . 0 1 0 . 0 5.0 - 5 . 0 5 . 0 2.0 - 2 . 0 2 . 0 3.0 - 3 . 0 3 . 0 4.0 - 4 . 0 4 . 0 0.2 - 0 . 2 0 . 2 0.4 - 0 . 4 0 . 4 0.6 - 0 . 6 0 . 6 0.8 - 0 . 8 0 . 8 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 and s22 swp max 10ghz swp min 8ghz s[1,1] * EIC8596-8 s[2,2] * EIC8596-8 8 8.5 9 9.5 10 frequency (ghz) s21 and s12 -30 -20 -10 0 10 20 s21 and s12 (db) db(|s[2,1]|) * EIC8596-8 db(|s[1,2]|) * EIC8596-8
EIC8596-8 updated 08/21/2007 8.5 0-9.60ghz 8-watt internally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 power de-rating curve and im3 definition power dissipation vs. temperature 0 5 10 15 20 25 30 35 40 45 0 25 50 75 100 125 150 175 case temperature (c) total power dissipation (w) safe operating region potentially unsafe operating region f1 f2 (2f1-f2) f1 f2 (2f2-f1) im3 pout pin ip 3 = pout + im3/2 third-order intercept point ip3 f1 or f2 (2f2 - f1) or (2f1 - f2) pin [s.c.l.] (dbm) pout [s.c.l.] (dbm) im3 typical power data (v ds = 10 v, i dsq = 2200 ma) typical im3 data (v ds = 10 v, i dsq 65% idss ) p-1db & g-1db vs frequency 35 36 37 38 39 40 41 8.48.68.89.09.29.49.69.8 frequency (ghz) p-1db (dbm) 7 8 9 10 11 12 13 g-1db (db) p-1db (dbm) g-1db (db) im3 vs output power f1 = 9.60 ghz, f2 = 9.59 ghz -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 23 24 25 26 27 28 29 30 31 32 33 34 35 pout [s.c.l.] (dbm) im3 (dbc ) im3 (dbc)
EIC8596-8 updated 08/21/2007 8.5 0-9.60ghz 8-watt internally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 packages outline dimensions in inches, tolerance + .005 unless otherwise specified EIC8596-8 (hermetic) EIC8596-8nh (non-hermetic) all dimensions in inches excelics yyww sn all dimensions in inches yyww excelics sn caution! esd sensitive device. caution! esd sensitive device. ordering information part number packages grade 1 f test (ghz) p 1db (min) im 3 (min) 2 EIC8596-8 hermetic industrial 8.50-9.60ghz 38.5 -40 EIC8596-8nh non-hermetic industrial 8.50-9.60ghz 38.5 -40 notes: 1. contact factory for military and hi-rel grades. 2. exact test conditions are specified in ?electrical characteristics? table. disclaimer excelics semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. excelics does not assume any liability arising out of the application or use of any product or circuit described herein. life support policy excelics semiconductor products are not authoriz ed for use as critical components in life support devices or systems without the express written approval of excelics semiconductor, inc. as here in: 1. life support devices or systems are devices or system s which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labe ling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life suppo rt device or system, or to affect its safety or effectiveness EIC8596-8 EIC8596-8nh
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